A Selected Set of My Publications and Conference Presentations

  1.  Fred L. Terry, Jr.,”Chamber Wall Effects on Polycrystalline-Si Reactive Ion Etching in Cl2: A Multiple Real-Time Sensors Study,” Northern California American Vacuum Society Plasma Etch Users Group Meeting, September 8, 2005, Santa Clara, CA. (Invited talk)
  2. Fred Lewis Terry, Jr. and Joseph J. Bendick,” Immersion Scatterometry for Improved Feature Resolution and High Speed Acquisition of Resist Profiles, “Proc. SPIE Vol. 5752, Metrology, Inspection, and Process Control for Microlithography XIX, p. 237-247 (May, 2005). (paper)
  3. Hsu-Ting Huang, Fred L. Terry, Jr.,  “Spectroscopic ellipsometry and reflectometry from gratings (Scatterometry) for critical dimension measurement and in situ, real-time  process monitoring,” Thin Solid Films455-456, pp. 828-836 (2004). Refereed journal article from talk at the Third International Conference on Spectroscopic Ellipsometry (ICSE-3), Vienna, Austria, July, 2003. (Invited Talk)   (paper)   (conference presentation)  (Quicktime Movie of Photoresist Trim) (Quicktime Movie of Si Shallow Trench Etch)
  4. S. Govindaswamy, J. East, F. Terry, E. Topsakal, J. L. Volakis, G.I. Haddad, Frequency-selective surface based bandpass filters in the near-infrared region, Microwave and Optical Technology Letters,  vol. 41, no. 4,  20 May 2004, p 266-9 (paper)
  5. S. Govindaswamy, J. East, F. Terry, E. Topsakal, J.L. Volakis, G.I. Haddad, Dual-frequency-selective surfaces for near-infrared bandpass filters, Microwave and Optical Technology Letters, vol. 43, no. 2,  20 Oct. 2004, p 95-8 (paper)
  6. Fred L. Terry, Jr., “Accuracy limitations in specular-mode optical topography extraction,”  Proc. SPIE Vol. 5038, p. 547-558, Metrology, Inspection, and Process Control for Microlithography XVII. (2003). (paper)   (conference viewgraphs) (Quicktime Movie of realtime etch monitoring).
  7. Pete I. Klimecky, J. W. Grizzle, and Fred L. Terry, Jr., ” Compensation for transient chamber wall condition using real-time plasma density feedback control in an inductively coupled plasma etcher, ” J. Vac. Sci. Technol., A 21, pp. 706-17 (2003).(paper)
  8. Suhong Kim, Pete Klimecky, Jay B. Jeffries, Fred L. Terry, Jr., and Ronald K. Hanson, “In Situ measurements of HCl during plasma etching of poly-silicon using a diode laser absorption sensor,”  Measurement Science and Technology14, pp. 1662-1670 (2003). (paper)
  9. Hyun-Mog Park, Dennis S. Grimard, Jessy W. Grizzle, and Fred Lewis Terry, Jr., “Etch profile control of high-aspect, deep submicron a-Si gate etch,”  IEEE Transactions on Semiconductor Manufacturing14, pp 242-254 (2001). (paper)
  10. Normal Incidence Spectroscopic Ellipsometry for Critical Dimension Monitoring, Hsu-Ting Huang, Wei Kong, and Fred Lewis Terry, Jr., Applied Physics Letters78, 3983-3985 (2001). (paper)
  11. B. S. Stutzman, H.-T. Huang, and F. L. Terry, Jr., Two-channel spectroscopic reflectometry for in situ monitoring of blanket and patterned structures during reactive ion etching, J. Vac. Sci. Techn.B18, pp.2785-93 (2000). (paper)
  12. Brooke S. Stutzman, Wei Kong, Hsu-ting Huang, Hunsuk Kim, Fred L. Terry Jr., “Measurement of Evolution of Grating Structures Using Off-Normal Spectral Reflectometry,” abstract SC08.09, Focus Session on Industrial Applications of Optical Spectroscopy, American Physical Society Centennial Meeting, Atlanta, GA, March 20-26, 1999. (Viewgraphs)
  13. H. Kim, F. L. Terry, Jr. , In-situ UV absorption CF2 sensor for reactive ion etch process control, EOS/SPIE Conference on Microelectronic Manufacturing Technologies: Conference on Process and Equipment Control in Microelectronic Manufacturing, Edinburgh, Scotland, United Kingdom, May 18-21, 1999 (paper)
  14. W. Kong, H. T. Huang, M. E. Lee, C. Galarza, W. Sun, and F. L. Terry, Jr., “Analysis of Time-Evolved Spectroscopic Ellipsometry Data from Patterned Structures for Etching Process Monitoring and Control,” paper 19.2, SRC TECHCON, Las Vegas, Nevada, September 9-11, 1998. (won best paper award for Factory Control and Operations session) (Paper) (Poster)
  15. M. E. Lee, C. Galarza, W. Kong, W. Sun, and F. L. Terry, Jr., “Analysis of Reflectometry and Ellipsometry Data from Patterned Structures,” International Conference on Characterization and Metrology for ULSI Technology, Gaithersburg, MD, March 23-27, 1998, AIP Conference Proceedings 449, pp. 331-5 (1998). (Paper)
  16. Pete Klimecky, Craig Garvin, Cecilia G. Galarza, Brooke S. Stutzman, Pramod P. Khargonekar, and Fred L. Terry Jr., Real-Time RIE Metrology Techniques to Enable In Situ Response Surface Process Characterization, J. Electrochem. Soc., 148, pp. 34-40 (2001). (paper)
  17. F. L. Terry, Jr., “In Situ Monitoring of III-V Processing,” (Invited Talk), MRS Fall Meeting, Boston, Ma., December, 1998. (Paper)
  18. T. E. Benson, A. Ramamoorthy, L. I. Kamlet, and F. L. Terry, Jr., “High-Speed, High-Accuracy Optical Measurements of Polycrystalline Silicon for Process Control,”, Thin Solid Films, 313-4, pp. 177-182 (1998). (Paper)
  19. T. L. Vincent, P. I. Klimecky, W. Sun, P. P. Khargonekar, and F. L. Terry, Jr., “A Highly Accurate Endpoint Method for a TFT Back Channel Recess Etch,” SID/IEEE International Display Research Conference Digest, Toronto, Canada, September 15-19, 1997, pp. 274-7 (1997). (Paper)
  20. T. E. Benson, L. I. Kamlet, P. Klimecky, and F. L. Terry, Jr., “In-situ Spectroscopic Reflectometry for Polycrystalline Silicon Thin Film Etch Rate Determination During Reactive Ion Etching,” J. Elec. Mat., 25, pp. 955-64 (1996). (Paper)
  21. T. E. Benson, L. I. Kamlet, S.M. Ruegsegger, C. K. Hanish, P. D. Hanish, B. A. Rashap, P. Klimecky, J. S. Freudenber, J. W. Grizzle, P. P. Khargonekar, and F. L. Terry, Jr., “Sensor systems for real-time feedback control of reactive ion etching,” J. Vac. Sci. Tech., B 14, pp. 483-8 (1996). (Paper)
  22. L. I. Kamlet, and F. L. Terry, Jr., “A composition-dependent model for the complex dielectric function of In1-xGaxAsyP1-y/ lattice- matched to InP”, J. Elec. Mat., 24, pp. 2005-13 (1995). (Paper)
  23. P. D. Hanish, J. W. Grizzle, M. D. Giles, and F. L. Terry, Jr., “A model-based technique for real-time estimation of absolute fluorine concentration in a CF4/Ar plasma,” J. Vac. Sci. Tech., A 13, pp. 1802-7 (1995). (Paper)
  24. B. A. Rashap, M. E. Elta, H. Etemad, J. P. Fournier, J. S. Freduenberg, M.  D. Giles, J. W. Grizzle, P. T. Kabamba,  P. P. Khargonekar, S. Lafortune,  J. R. Moyne, D. Teneketzis, and F. L. Terry, Jr., Control of Semiconductor Manufacturing Equipment, IEEE Transactions on Semiconductor Manufacturing, 8, pp. 286-297 (1995). (paper)
  25. D. S. MacGregor, R. A. Rojeski, G. F. Knoll, F. L. Terry, Jr., J. East, and, Y. Eisen, Present Status of Undoped Semi-Insulating LEC Bulk GaAs as a Radiation Spectrometer, Nucl. Instrum. and Methods in Phys. Res., A 343, pp. 527-38 (1994). (paper)
  26. D. S. MacGregor, R. A. Rojeski, G. F. Knoll, F. L. Terry, Jr., J. East, and, Y. Eisen, Evidence for field enhanced capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors, J. Appl. Phys., 75, pp. 7910-15 (1994). (paper)
  27. J. S. Herman and F. L. Terry, Jr., Plasma Passivation of GaAs, J. Vac. Sci. Techn., A11, pp. 1094-8 (1993). (paper)
  28. J. S. Herman and F. L. Terry, Jr., Hydrogen Sulfide Plasma Passivation of Gallium Arsenide, Appl. Phys. Lett., 60, pp. 716-717 (1992). (paper)
  29. J. S. Herman and F. L. Terry, Jr., A Two-Temperature Technique for PECVD SiO2, IEEE Elec. Dev. Lett., IEEE Elec. Dev. Lett., 12, 236-7 (1991). (paper)
  30. F. L. Terry, Jr., A Modified Harmonic Oscillator Approximation Scheme for the Dielectric Constants of AlxGa1-xAs, J. Appl. Phys., 70, pp. 409-417 (1991). (paper)