Techniques (especially nondestructive) for characterization of electronic materials and nanostructures; in situ process monitoring; control of semiconductor processes; physics of solid state devices; insulated gate transistor physics and technology; properties of electronic materials and their effects on devices; reliability of semiconductor devices, particularly in hostile environments.
Current Research Activities
Optical measurement of nanoscale features, characterization and control of micro- and nano-fabrication processes (particularly plasma processes), high-speed thin film measurements, models for the optical dielectric response of materials, spectroscopic ellipsometry for characterization of electronic materials.
Massachusetts Institute of Technology, Cambridge, Massachusetts
Ph.D. degree, June, 1985, Department of Electrical Engineering and Computer Science. Thesis under Professor S. D. Senturia on “Electron Traps and Interface State Generation in Nitrided Oxides.”
M.S. and B.S. degrees in Electrical Engineering, June, 1981. Thesis entitled “A New Silicon Oxynitride Process for MIS Devices.” Curriculum concerned classical and quantum physics, circuit design, linear systems analysis, computer programming and elementary computer architecture, applied and abstract mathematics.
External Links of Interest
- University of Michigan Maps – Maps to U-M and the Ann Arbor Area
- The University of Michigan Home Page – U of M main page